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Title:Silicon/silicon-Germanium Modulation-Doped Field-Effect Transistors for Complementary Circuit Applications
Author(s):Arafa, Mohamed A.
Doctoral Committee Chair(s):I. Adesida
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:In this work, the fabrication and characteristics of p-type and n-type MODFETs on a relaxed-SiGe buffer was investigated. Record-performance was achieved for the p-type MODFETs. The fabrication of enhancement-mode n-type MODFETs with three different capping layer configurations was also investigated. A novel super-self-aligned process for the fabrication of enhancement-mode MODFETs on uncapped, depleted heterostructures with ion-implanted source and drain was developed.
Issue Date:1997
Type:Text
Language:English
Description:131 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/81198
Other Identifier(s):(MiAaPQ)AAI9812521
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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