Files in this item

FilesDescriptionFormat

application/pdf

application/pdf9812526.pdf (6MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:Modeling of In(0.49)Ga(0.51)P/GaAs Heterojunction Bipolar Transistors for ADC and MMIC Circuit Design
Author(s):Barlage, Douglas William
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:State-of-the-art monolithic Ka-band voltage-controlled oscillators were designed, tested and fabricated. Power output was $>$5 dBm and the phase noise was $<$90 dBc/Hz at 100 kHz. The phase noise and output power are also tested vs. the ambient temperature of the oscillator. Another design is presented that exhibits a tuning range of 2 GHz. The initial design procedure is described in detail. Several monolithic varactors are empirically assessed for their contribution to the phase noise. Preliminary results for coplanar resonator structures are presented. These are presented as a means to enhance the frequency stability of the circuit. Design architectures based on the resonator structure are presented. In addition, to improve the tuning range of the state-of-the-art oscillator, several wave-guide lengths were adjusted. These are included as well.
Issue Date:1997
Type:Text
Language:English
Description:133 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/81199
Other Identifier(s):(MiAaPQ)AAI9812526
Date Available in IDEALS:2015-09-25
Date Deposited:1997


This item appears in the following Collection(s)

Item Statistics