Files in this item

FilesDescriptionFormat

application/pdf

application/pdf9812708.pdf (2MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:The Development of High-Frequency Gallium Arsenide MESFET and Integrated Circuit Technology
Author(s):Middleton, Jeremy Richard
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Speed and gain measurements are presented for discrete devices and integrated circuits. In addition, the use of the established process to produce the first high-frequency GaAs MOSFET is presented.
Issue Date:1997
Type:Text
Language:English
Description:92 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/81216
Other Identifier(s):(MiAaPQ)AAI9812708
Date Available in IDEALS:2015-09-25
Date Deposited:1997


This item appears in the following Collection(s)

Item Statistics