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Title:Fabrication of Gallium Indium Arsenide Phosphide Quantum Wire Heterostructures for Optoelectronic Applications
Author(s):Moy, Aaron M.
Doctoral Committee Chair(s):Cheng, K.Y.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Thermal annealing techniques were also applied to QWRs. After this treatment, emissions were found to be at a higher energy than the as-grown samples, attributed to the disordering of the lateral composition modulation which, in effect, raised the bandgap energy of the QWR material. In addition, annealing was also found to reduce the magnitude but maintain the direction of a red-shift in emission wavelength with cooling measurement temperature. This thermal treatment served to be a useful tool in engineering the emission wavelength from a QWR sample from 1.6 to 1.55 mm.
Issue Date:1997
Type:Text
Language:English
Description:85 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/81217
Other Identifier(s):(MiAaPQ)AAI9812714
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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