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Title:Growth and Characterization of High-Speed C-Doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy
Author(s):Thomas, Sunil
Doctoral Committee Chair(s):Stillman, Gregory E.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\sb{\rm T}$ and 119 GHz for f$\sb{\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed.
Issue Date:1998
Type:Text
Language:English
Description:87 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
URI:http://hdl.handle.net/2142/81232
Other Identifier(s):(MiAaPQ)AAI9834751
Date Available in IDEALS:2015-09-25
Date Deposited:1998


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