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Title:A Sub-0.1-Micron PtSi Schottky Source/drain MOSFET
Author(s):Wang, Chinlee
Doctoral Committee Chair(s):Tucker, John R.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:The devices are fabricated with lightly doped silicon substrates, 19-A to 34-A gate oxide, $\sim$0.05-$\mu$um gate lithography, 100-A sidewall oxides, self-aligned PtSi, and no intentional doping. The thin gate and sidewall oxides enable high field emission currents at low voltages. These devices exhibit on-state currents of 200-400 $\mu$A/$\mu$m and on-off ratios of 20 to 50. Cryogenic refrigeration of the devices reduce the off-state leakage current by several orders of magnitude.
Issue Date:1998
Type:Text
Language:English
Description:51 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
URI:http://hdl.handle.net/2142/81234
Other Identifier(s):(MiAaPQ)AAI9834757
Date Available in IDEALS:2015-09-25
Date Deposited:1998


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