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Title:Interfacial Structures of Oxides on GaAs
Author(s):Chou, Li-Jen
Doctoral Committee Chair(s):Hsieh, Kuang-Chien
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:For the deposited oxide/GaAs work, only deposition of (Ga,Gd)$\sb2$O$\sb3$ oxide among others shows a low interface trap density (D$\rm\sb{it})$ at the oxide-GaAs interface. It is low enough to warrant the demonstration of both n- and p-channel enhancement GaAs MOSFETs. High-resolution transmission electron microscopy (HRTEM) indicates that deposition of MgO, Al$\sb2$O$\sb3$, and Ga$\sb2$O$\sb3$, fail to yield a truly amorphous oxide. Although deposition of SiO$\sb2$ results in an amorphous oxide. There lacks a transition layer between SiO$\sb2$ and GaAs. A correlation between high-low frequency capacitance-voltage (C-V) phenomenon and physical interfacial structure property has been derived by HRTEM. A thin oxide epilayer on GaAs has been identified and proposed as the key factor to solve the surface dangling bond problem. X-ray photoelectron spectroscopy (XPS) and Auger data show that Gd rich in the interface region is the essential part of the good quality MOS devices. It suggest that carefully controlled the initial growth conditions such as substrate temperature, source temperature and oxide growth rate will directly affect the electrical property of the MOSFET.
Issue Date:1998
Type:Text
Language:English
Description:85 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
URI:http://hdl.handle.net/2142/81238
Other Identifier(s):(MiAaPQ)AAI9904410
Date Available in IDEALS:2015-09-25
Date Deposited:1998


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