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Title:Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs
Author(s):Evans, Peter Weindel
Doctoral Committee Chair(s):Holonyak, Nick, Jr.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to optimize wafer preparation and bonding parameters. Tunnel junctions are inserted at various distances from the bonding interface to monitor the degree of annealing and disordering that occurs during wafer bonding. The wafer bonding work is the basis for fabricating more sophisticated device structures including light-emitting diodes (LEDs) and VCSELs employing buried tunnel contact junctions.
Issue Date:1998
Description:53 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
Other Identifier(s):(MiAaPQ)AAI9904450
Date Available in IDEALS:2015-09-25
Date Deposited:1998

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