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Title:High-Performance Indium Gallium Phosphide/gallium Arsenide Heterojunction Bipolar Transistors
Author(s):Ahmari, David Abbas
Doctoral Committee Chair(s):Stillman, Gregory E.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.
Issue Date:1998
Type:Text
Language:English
Description:65 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
URI:http://hdl.handle.net/2142/81277
Other Identifier(s):(MiAaPQ)AAI9921655
Date Available in IDEALS:2015-09-25
Date Deposited:1998


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