Files in this item
| Files | Description | Format |
|---|---|---|
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application/pdf  9921700.pdf (4MB) | (no description provided) |
Description
| Title: | Increasing the Critical Thickness of InGaAs Quantum Wells Using Strain-Relief Technologies |
| Author(s): | Jones, Andrew Marquis |
| Doctoral Committee Chair(s): | Coleman, James J. |
| Department / Program: | Electrical Engineering |
| Discipline: | Electrical Engineering |
| Degree Granting Institution: | University of Illinois at Urbana-Champaign |
| Degree: | Ph.D. |
| Genre: | Dissertation |
| Subject(s): | Engineering, Materials Science |
| Abstract: | Compliant membranes enable strain relief by depositing on an ultra-thin semiconductor base. Unlike growth on typical thick substrates, expansion of the compliant membrane during strained-layer regrowth allows the membrane to accommodate most of the strain energy. Ternary InGaAs compliant films supported above a GaAs substrate with single AlGaAs pedestals have been utilized to fabricate long-wavelength (1.35 mum) InGaAs quantum wells on a GaAs substrate. |
| Issue Date: | 1999 |
| Type: | Text |
| Language: | English |
| Description: | 99 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999. |
| URI: | http://hdl.handle.net/2142/81282 |
| Other Identifier(s): | (MiAaPQ)AAI9921700 |
| Date Available in IDEALS: | 2015-09-25 |
| Date Deposited: | 1999 |
This item appears in the following Collection(s)
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Dissertations and Theses - Electrical and Computer Engineering
Dissertations and Theses in Electrical and Computer Engineering -
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois