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Title:Increasing the Critical Thickness of InGaAs Quantum Wells Using Strain-Relief Technologies
Author(s):Jones, Andrew Marquis
Doctoral Committee Chair(s):Coleman, James J.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Compliant membranes enable strain relief by depositing on an ultra-thin semiconductor base. Unlike growth on typical thick substrates, expansion of the compliant membrane during strained-layer regrowth allows the membrane to accommodate most of the strain energy. Ternary InGaAs compliant films supported above a GaAs substrate with single AlGaAs pedestals have been utilized to fabricate long-wavelength (1.35 mum) InGaAs quantum wells on a GaAs substrate.
Issue Date:1999
Type:Text
Language:English
Description:99 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/81282
Other Identifier(s):(MiAaPQ)AAI9921700
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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