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Title:Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents
Author(s):Wierer, Jonathan Joseph, Jr
Doctoral Committee Chair(s):Holonyak, Nick, Jr.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Data are presented on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical characteristics and provide a means to create thin highly defined cavities in semiconductor light-emitting structures.
Issue Date:1999
Type:Text
Language:English
Description:67 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/81288
Other Identifier(s):(MiAaPQ)AAI9921754
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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