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Title:Photoelectrochemical Wet Etching of Gallium Nitride
Author(s):Youtsey, Christopher Thomas
Doctoral Committee Chair(s):I. Adesida
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Chemistry, Inorganic
Abstract:In this work, the technique of photoelectrochemical wet etching using KOH solutions has been developed for n-type GaN materials. Customized hardware and software have been assembled to carry out the etching. The etching characteristics were characterized over a wide range of process conditions. This work has led to a viable wet etching technology for GaN device fabrication. In addition, the etching technique is useful for material characterization and measuring dislocation densities in n-type GaN thin films.
Issue Date:1999
Type:Text
Language:English
Description:81 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/81289
Other Identifier(s):(MiAaPQ)AAI9921759
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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