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Title:InP/InGaAs Heterojunction Bipolar Transistors and Field-Effect Transistors Grown by Gas -Source Molecular Beam Epitaxy
Author(s):Kuo, Hao-Chung
Doctoral Committee Chair(s):Stillman, G.E.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Finally, the thermal degradation of heavily C-doped InGaAs and its effects on dc properties of InGaAs/InP HBTs have been studied. The degradation of the junction properties and current gain-base sheet resistance ratio can be attributed to the formation of C precipitates. These findings are important for improving the reliability of C-doped InP/InGaAs HBTs. (Abstract shortened by UMI.).
Issue Date:1999
Type:Text
Language:English
Description:95 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/81294
Other Identifier(s):(MiAaPQ)AAI9944917
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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