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Title:Predicting CMOS Hot Carrier Degradation in VLSI Circuits
Author(s):Li, Erhong
Doctoral Committee Chair(s):Rosenbaum, Elyse
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Reliability simulation of a 51-stage ring-oscillator was performed. The circuit lifetime improvement due to D2 anneal can be well estimated by the device dc lifetime improvement data.
Issue Date:1999
Type:Text
Language:English
Description:91 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/81309
Other Identifier(s):(MiAaPQ)AAI9953077
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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