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Title:Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors
Author(s):Ping, Andrew Taiann
Doctoral Committee Chair(s):Adesida, Ilesanmi
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:The fabrication of AlGaN/GaN HFETs entailed first developing fundamental processing techniques such as isolation etching, low-resistance drain/source ohmic contacts, and Schottky gate formation. These efforts along with related processing issues will be discussed. Devices were then fabricated on epitaxial layers grown on sapphire substrates and on n-type, p-type, and insulating SiC. While sapphire is the substrate of choice for the nitrides, SiC substrates are better suited for high-power devices due to their significantly higher thermal conductivity. The dc, RF, and high-temperature performance of transistors on sapphire and SiC were investigated to determine the performance similarities and differences between using the various substrates. Forming low-resistance ohmic contacts to the wide bandgap heterostructures is difficult and as a result limits the overall device performance. In an effort to improve drain-source contacts, gate recessing through the use of low-damage inductively coupled plasma reactive ion etching was pursued. A wet chemical etching process called photoelectrochemical etching was also investigated.
Issue Date:1999
Description:101 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
Other Identifier(s):(MiAaPQ)AAI9953111
Date Available in IDEALS:2015-09-25
Date Deposited:1999

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