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Title:Optical Characterization of Defects and Impurities in Gallium Nitride
Author(s):Reuter, Erik Earl
Doctoral Committee Chair(s):Stephen G. Bishop
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Abstract:Photoluminescence was used to measure the bandgap of GaN as a function of temperature in the range 2--811 K, and the results were fitted to Varshni's empirical formula to obtain an expression for the dependence of the energy gap of GaN on temperature which should be generally applicable to most high-quality, unstrained GaN material.
Issue Date:1999
Type:Text
Language:English
Description:103 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/81313
Other Identifier(s):(MiAaPQ)AAI9953122
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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