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Title:Development and Study of Atomic Nitrogen Sources for Synthesis of Electronic Materials
Author(s):Gluschenkov, Oleg
Doctoral Committee Chair(s):Kyekyoon (Kevin) Kim
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Low-pressure atomic nitrogen source was used to investigate nitridation of thin silicon dioxide films at 760°C. The SiO2 films were substantially nitrided by an exposure to the atomic flux of ∼10 15 cm-2s-1 for only 30 s.
Issue Date:1999
Type:Text
Language:English
Description:146 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/81321
Other Identifier(s):(MiAaPQ)AAI9955617
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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