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Title:Growth and Design of High-Performance InGaP/GaAs Heterojunction Bipolar Transistors Grown by Low -Pressure Metalorganic Chemical Vapor Deposition
Author(s):Hartmann, Quesnell Jacob
Doctoral Committee Chair(s):Stillman, Gregory E.
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:Although device physics and semiconductor theory were an essential part of this research, few new theoretical calculations or predictions were made. Rather, this thesis relied heavily on the work of those, who early in the history of semiconductors, developed the theories of minority carrier injection, heterojunction effects, bandgap engineering, and carbon-doping. The work described here is mostly an exercise in applying these theories to produce a manufacturable, high-performance transistor capable of meeting the demands of modern electronics.
Issue Date:1998
Description:107 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
Other Identifier(s):(MiAaPQ)AAI9955690
Date Available in IDEALS:2015-09-25
Date Deposited:1998

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