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Title:High-Speed Indium Gallium Phosphide/indium Gallium Arsenide/indium Phosphide Doped-Channel HFETs and Implanted Gallium Arsenide Enchancement/depletion-Mode MESFETs Technology With an f(T) Over 130 GHz
Author(s):Tang, Zhuang
Doctoral Committee Chair(s):Feng, Milton
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Electronics and Electrical
Abstract:Direct ion-implanted GaAs MESFET has become the primary workhorse for high-speed and millimeter-wave wireless applications due to its high performance-cost ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs enhancement/depletion-mode MESFETs was demonstrated. The 0.12-mum gate-length D-mode MESFET shows an fT of 136 GHz and fmax of 200 GHz. With the same implantation schedule, we also fabricated, for the first time, the E-mode MESFET exhibiting fT of 120 GHz and fmax of 166 GHz.
Issue Date:2000
Description:121 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.
Other Identifier(s):(MiAaPQ)AAI9990158
Date Available in IDEALS:2015-09-25
Date Deposited:2000

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