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Title:Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices
Author(s):Wordelman, Carl John
Doctoral Committee Chair(s):U. Ravaioli
Department / Program:Electrical Engineering
Discipline:Electrical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Applied Mechanics
Abstract:The combined P3M-EMC method is tested for large and short channel-length silicon MOSFETs and results are compared with continuum simulations in 2D and 3D. The results indicate that classical short-range Coulomb methods such as the P3M-EMC method can match bulk mobilities and kinietic energies predicted by the modified Hartree model. Results predict cooler hot carrier tails than do methods that use c-i scattering rates and do not consider c-c interaction. Finally, timing analysis shows that the classical molecular-dynamical methods like the P3M-EMC method can simulate very-small devices with modest additional cost compared to the traditional Monte Carlo device simulation method, and such methods will likely continue to be useful ways to model ultrasmall semiconductor devices.
Issue Date:2000
Description:97 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.
Other Identifier(s):(MiAaPQ)AAI9990192
Date Available in IDEALS:2015-09-25
Date Deposited:2000

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