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Title:Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon
Author(s):Gunawan, Rudiyanto
Doctoral Committee Chair(s):Braatz, Richard D.; Seebauer, Edmund G.
Department / Program:Chemical Engineering
Discipline:Chemical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Chemical
Abstract:Reducing the junction depth using rapid thermal annealing with high heating rates comes at a cost of increasing sheet resistance. A model-based optimization is formulated to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet resistance. Comparison of different parameterizations of the optimal trajectories shows that linear profiles give the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal control trajectory motivates improvements in feedback control instrumentation and strategies for these processes.
Issue Date:2003
Type:Text
Language:English
Description:123 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.
URI:http://hdl.handle.net/2142/82354
Other Identifier(s):(MiAaPQ)AAI3101850
Date Available in IDEALS:2015-09-25
Date Deposited:2003


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