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Title:Surface Reaction Mechanisms for Plasma Processing of Semiconductors
Author(s):Sankaran, Arvind
Doctoral Committee Chair(s):Kushner, Mark J.
Department / Program:Chemical and Biomolecular Engineering
Discipline:Chemical and Biomolecular Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Cleaning of residual polymer from trenches following etching and the deposition of a continuous barrier layer are critical processes for integration PS as ILDs. To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and incorporated into the MCFPM. Stripping was less efficient from PS trenches having large pores and high interconnectivity, as compared to SS. Cu ionized metal physical vapor deposition was also investigated as a surrogate for barrier coating. Thin film deposition was less conformal for PS with large pores and interconnected porous networks.
Issue Date:2003
Type:Text
Language:English
Description:160 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.
URI:http://hdl.handle.net/2142/82359
Other Identifier(s):(MiAaPQ)AAI3111635
Date Available in IDEALS:2015-09-25
Date Deposited:2003


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