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Title:Extraordinary Temperature Amplification in Ion-Stimulated Surface Diffusion
Author(s):Wang, Zhengguang
Doctoral Committee Chair(s):Seebauer, Edmund G.
Department / Program:Chemical and Biomolecular Engineering
Discipline:Chemical and Biomolecular Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Chemical
Abstract:Molecular Dynamic simulation of low-energy noble gas atoms impacting semiconductor surfaces revealed a new, unexpectedly strong tradeoff between the energy threshold for point defect formation and substrate temperature. Experimental measurements of Ge and In surface diffusion on Si(111) by optical second harmonic microscopy (SHM) confirmed major aspects of the predicted temperature amplification. The work may offer a new means for selecting specific rate processes in application such as plasma processing or ion beam assist deposition.
Issue Date:2003
Type:Text
Language:English
Description:73 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.
URI:http://hdl.handle.net/2142/82361
Other Identifier(s):(MiAaPQ)AAI3111656
Date Available in IDEALS:2015-09-25
Date Deposited:2003


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