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Title:Controlling Activation Energy to Wafers and Walls in Plasma Processing Reactors for Microelectronics Fabrication
Author(s):Agarwal, Ankur
Doctoral Committee Chair(s):Kushner, Mark J.
Department / Program:Chemical Engineering
Discipline:Chemical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:Wafer-to-wafer reproducibility during plasma etching presents another challenge. The use of low-pressure, high-density discharges results in increasing buildup of etch products in the plasma reactor resulting in increased interactions of etch products with wafer and non-wafer surfaces, alike. Consequences of such interactions have been investigated for Ar/Cl2 inductively-coupled plasma etching of poly-Si. The interactions of etch products with the wafer ultimately results in decrease in etch rates while the chamber seasons due to interactions with the non-wafer surfaces. A proportional controller using bias voltage as an actuator and etch rate as the sensor was implemented to achieve real-time, closed-loop control of etch rate to counter the effects of seasoning.
Issue Date:2007
Description:241 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.
Other Identifier(s):(MiAaPQ)AAI3301097
Date Available in IDEALS:2015-09-25
Date Deposited:2007

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