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Title:Advanced Methods for Defect Engineering in Silicon
Author(s):Kwok, Tsz Mei
Doctoral Committee Chair(s):Seebauer, Edmund G.
Department / Program:Chemical Engineering
Discipline:Chemical Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Chemical
Abstract:The work seeks to study the effects of two newly discovered defect engineering mechanisms: the use of surface chemistry and optical stimulation on boron diffusion and activation during thermal annealing for ultrashallow junction formation. The work has a strong focus on the use of mathematical modeling to better understand the mechanism of boron diffusion, and utilizes rigorous system-based methods including parameter sensitivity analysis and maximum a posteriori (MAP) estimation to refine model parameters.
Issue Date:2007
Type:Text
Language:English
Description:220 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.
URI:http://hdl.handle.net/2142/82411
Other Identifier(s):(MiAaPQ)AAI3314957
Date Available in IDEALS:2015-09-25
Date Deposited:2007


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