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Title:Fundamentals and Applications of the Hydrogen /Deuterium Isotope Effect in Improved Hot -Carrier Reliability of MOS Devices
Author(s):Cheng, Kangguo
Doctoral Committee Chair(s):Abelson, John R.; Lyding, Joseph W.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:*Originally published in DAI Vol. 62, No. 6. Reprinted here with corrected author name.
Issue Date:2001
Type:Text
Language:English
Description:112 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.
URI:http://hdl.handle.net/2142/82696
Other Identifier(s):(MiAaPQ)AAI3017042
Date Available in IDEALS:2015-09-25
Date Deposited:2001


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