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Description
Title: | Crystallization of Isolated Amorphous Zones in Semiconductors |
Author(s): | Hollar, Eric Prater |
Doctoral Committee Chair(s): | Robertson, Ian M. |
Department / Program: | Materials Science and Engineering |
Discipline: | Materials Science and Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Materials Science |
Abstract: | Software was developed to detect, measure and track individual amorphous zones throughout a series of irradiation micrographs. Characteristic zone shrinkage behaviors were observed. A simple shrinkage model suggests that the defects responsible for regrowth are created very near the crystalline/amorphous interface. In the sub-threshold electron energy regime, crystallization is thought to be initiated by an electronic excitation which creates a dangling bond pair. By migrating along the crystalline/amorphous interface these dangling bonds are capable of reconstructing to the crystal a large number of atoms through a mechanism similar to that for thermally activated solid phase epitaxial growth. |
Issue Date: | 2001 |
Type: | Text |
Language: | English |
Description: | 136 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001. |
URI: | http://hdl.handle.net/2142/82704 |
Other Identifier(s): | (MiAaPQ)AAI3023075 |
Date Available in IDEALS: | 2015-09-25 |
Date Deposited: | 2001 |
This item appears in the following Collection(s)
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Dissertations and Theses - Materials Science and Engineering
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois