Files in this item



application/pdf3023075.pdf (7MB)Restricted to U of Illinois
(no description provided)PDF


Title:Crystallization of Isolated Amorphous Zones in Semiconductors
Author(s):Hollar, Eric Prater
Doctoral Committee Chair(s):Robertson, Ian M.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:Software was developed to detect, measure and track individual amorphous zones throughout a series of irradiation micrographs. Characteristic zone shrinkage behaviors were observed. A simple shrinkage model suggests that the defects responsible for regrowth are created very near the crystalline/amorphous interface. In the sub-threshold electron energy regime, crystallization is thought to be initiated by an electronic excitation which creates a dangling bond pair. By migrating along the crystalline/amorphous interface these dangling bonds are capable of reconstructing to the crystal a large number of atoms through a mechanism similar to that for thermally activated solid phase epitaxial growth.
Issue Date:2001
Description:136 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.
Other Identifier(s):(MiAaPQ)AAI3023075
Date Available in IDEALS:2015-09-25
Date Deposited:2001

This item appears in the following Collection(s)

Item Statistics