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Title:Carbon Incorporation Pathways and Lattice Site Distributions in Silicon Carbide/silicon(001) and Germanium Carbide/germanium(001) Alloys Grown by Molecular Beam Epitaxy
Author(s):Park, Se-Yang
Doctoral Committee Chair(s):Greene, Joseph E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts < 580°C with y ≤ 0.026. At Ts ≥ 580°C, increasing y and Ts leads to increase in the fraction of dicarbon complexes and the formation of periodic bulk planar structures consisting of ordered Si4C layers which form as a result of C surface segregation. (2) In contrast to Si1-yC y/Si(001), I find that irrespective of y and Ts values, complete substitutional C incorporation in Ge1-yCy/Ge(001) is not possible. A fraction of the total C concentration is always incorporated in nanoclusters. Increasing y and/or Ts leads to an increase in the fraction of C in nanoclusters due to a higher C-C encounter probability at the growth surface. (Abstract shortened by UMI.).
Issue Date:2001
Description:87 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.
Other Identifier(s):(MiAaPQ)AAI3023166
Date Available in IDEALS:2015-09-25
Date Deposited:2001

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