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Title:Reaction Paths for Self-Organized Surface Roughening of Silicon-Germanium Alloys During Hydride Gas-Source Molecular Beam Epitaxy
Author(s):Spila, Timothy Paul
Doctoral Committee Chair(s):Greene, Joseph E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:Si0.7Ge0.3(001) layers were grown at Ts = 450°C, where strain-induced roughening is completely quenched, to thicknesses greater than the critical value for misfit dislocation formation (tc ≃ 100 nm) to probe the effect of thetaH on cross-hatch formation. At t slightly larger than tc, surface roughness is dominated by single- and multiple-atomic-height steps associated with the interfacial misfits. The surface steps are preferential H desorption sites, thus the increased total step length results in a decrease in thetaH on terraces which increases RSiGe and allows higher adatom ascending step crossing probabilities which, driven by the inhomogeneous strain fields around the misfit dislocation clusters, contributes to the growth of periodic ridges.
Issue Date:2001
Description:84 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.
Other Identifier(s):(MiAaPQ)AAI3030481
Date Available in IDEALS:2015-09-25
Date Deposited:2001

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