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Title:Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111)
Author(s):Raviswaran, Arvind
Doctoral Committee Chair(s):Cahill, D.G.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:I have investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly three-dimensional. A large density of islands (>1011 cm-2) is observed during growth at low temperatures (600°C) yield a lower density of islands. The activation energy for the nucleation of these islands is ≈1.7 eV. The islands deposited at temperatures <550°C are predominantly coherent, while those formed at higher temperatures are incoherent, with a transition size of ≈18 nm.
Issue Date:2002
Description:162 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.
Other Identifier(s):(MiAaPQ)AAI3070417
Date Available in IDEALS:2015-09-25
Date Deposited:2002

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