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Title:Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices
Author(s):Zhou, Ling
Doctoral Committee Chair(s):I. Adesida
Department / Program:Materials Science andEngineering
Discipline:Materials Science andEngineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Various ohmic contact schemes on p-type GaN, n-type GaN and AlGaN, as well as Schottky contacts on GaN and AlGaN were studied using a wide range of electrical and materials characterization techniques. Band gap engineering and purely process-oriented techniques such as annealing, wet and dry etching were used to improve the electrical characteristics of these contacts. Materials analyses were used to understand the evolution of electrical behavior of these contacts at higher temperatures.
Issue Date:2002
Type:Text
Language:English
Description:188 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.
URI:http://hdl.handle.net/2142/82736
Other Identifier(s):(MiAaPQ)AAI3070495
Date Available in IDEALS:2015-09-25
Date Deposited:2002


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