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Description
Title: | Silicon Carbon(001) Gas-Source Molecular Beam Epitaxy From Methyl Silane and Silicon Hydride: The Effects of Carbon Incorporation and Surface Segregation on Growth Kinetics |
Author(s): | Foo, Yong-Lim |
Doctoral Committee Chair(s): | Greene, Joseph E. |
Department / Program: | Materials Science and Engineering |
Discipline: | Materials Science and Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Materials Science |
Abstract: | At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer process repeats itself. |
Issue Date: | 2003 |
Type: | Text |
Language: | English |
Description: | 81 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003. |
URI: | http://hdl.handle.net/2142/82737 |
Other Identifier(s): | (MiAaPQ)AAI3086062 |
Date Available in IDEALS: | 2015-09-25 |
Date Deposited: | 2003 |
This item appears in the following Collection(s)
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Dissertations and Theses - Materials Science and Engineering
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois