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Title:Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits
Author(s):Bratland, Kenneth Arnold, Jr
Doctoral Committee Chair(s):Greene, Joseph E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:Fully-strained Ge1-xSnx layers were grown on Ge(001) to probe the role of incorporated Sn concentrations (C Sn = 1 x 1018 cm-3 to 6.1 at%) on surface roughening pathways leading to EB during LT-MBE (155°C) of compressively strained films. Sn mediates surface morphological evolution through two competing pathways. With x ≲ 0.02, the dominant effect is a Sn-induced smoothening of the surface. At higher x there is a change in Ge1-xSn x(001) growth kinetics due to a rapid increase in compressive strain. This leads to a reduction in h1 with increasing x as strain-induced roughening overcomes the smoothening effects and increases in the roughening rate. I show that by varying C Sn I can controllably manipulate the roughening pathway, and hence h1, over a very wide range.
Issue Date:2003
Description:112 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003.
Other Identifier(s):(MiAaPQ)AAI3101802
Date Available in IDEALS:2015-09-25
Date Deposited:2003

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