Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology

Shi, Fang Frank
Use this link to cite this item:
http://hdl.handle.net/2142/82755

Files in this item

FilesDescriptionFormat

application/pdf

application/pdf3153427.pdf (5MB)Restricted to U of Illinois		(no description provided)PDF

Description

Title:Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology
Author(s):Shi, Fang Frank
Doctoral Committee Chair(s):Hsieh, Kuang-Chien
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:Finally, the feasibility of using the combination of low-temperature grown amorphous alpha-(Ga, As) materials and wafer-bonding technology to fabricate GaSb semiconductor on GaAs substrates to potentially create GaSb-on-insulator structure has been demonstrated.
Issue Date:2004
Type:Text
Language:English
Description:106 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.
URI:http://hdl.handle.net/2142/82755
Other Identifier(s):(MiAaPQ)AAI3153427
Date Available in IDEALS:2015-09-25
Date Deposited:2004


This item appears in the following Collection(s)

Item Statistics