Files in this item
Files | Description | Format |
---|---|---|
application/pdf ![]() ![]() | (no description provided) |
Description
Title: | Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology |
Author(s): | Shi, Fang Frank |
Doctoral Committee Chair(s): | Hsieh, Kuang-Chien |
Department / Program: | Materials Science and Engineering |
Discipline: | Materials Science and Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Electronics and Electrical |
Abstract: | Finally, the feasibility of using the combination of low-temperature grown amorphous alpha-(Ga, As) materials and wafer-bonding technology to fabricate GaSb semiconductor on GaAs substrates to potentially create GaSb-on-insulator structure has been demonstrated. |
Issue Date: | 2004 |
Type: | Text |
Language: | English |
Description: | 106 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004. |
URI: | http://hdl.handle.net/2142/82755 |
Other Identifier(s): | (MiAaPQ)AAI3153427 |
Date Available in IDEALS: | 2015-09-25 |
Date Deposited: | 2004 |
This item appears in the following Collection(s)
-
Dissertations and Theses - Materials Science and Engineering
-
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois