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Title:Reaction Path and Crystallograpy of Cobalt Silicide Formation on Silicon(001) by Reaction Deposition Epitaxy
Author(s):Lim, Chong Wee
Doctoral Committee Chair(s):Greene, Joseph E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:I show that high-flux low-energy Ar+ ion irradiation during RDE growth dramatically increases the area fraction of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio JAr+/JCo of the incident Ar> to Co fluxes is 1.4 to 0.72 with JAr+/JCo= 13.3. TEM analyses reveal that increasing JAr+/J Co results in larger values of both the number density and area of untwinned islands. The intense Ar+ ion bombardment under high-ion-flux conditions creates additional low-energy adsorption sites that favor the nucleation of untwinned islands and collisionally enhances the Co adatom surface mobility which, in turn, increases the probability of itinerant Co adatoms reaching these sites.
Issue Date:2004
Description:108 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.
Other Identifier(s):(MiAaPQ)AAI3160917
Date Available in IDEALS:2015-09-25
Date Deposited:2004

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