Files in this item



application/pdf3182409.pdf (6MB)Restricted to U of Illinois
(no description provided)PDF


Title:Transport in Low Pressure Plasma Reactors for Materials Processing
Author(s):Vyas, Vivek
Doctoral Committee Chair(s):Kushner, Mark J.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:Ionized metal physical vapor deposition (IMPVD) at pressures of a few mTorr is being increasingly used to deposit diffusion barriers and Cu seed layers into high aspect ratio trenches. Understanding plasma-substrate interactions will be critical to designing the next generation processes as the industry transitions to the 45-nm node. In this work, IMPVD using a hollow cathode magnetron source has been modeled at the reactor and feature scale. The consequences of varying process parameters such as power, pressure and magnetic fields have been investigated for a hollow cathode magnetron source and comparison has been made with experiments. The fluxes incident on the wafer are strongly influenced by the magnetic field configuration and strength. A Monte Carlo Feature Profile Model has been used to investigate the Cu seed layer deposition process. The lateral overburden at the mouth of features, or "overhang," is strongly correlated to the ion and neutral energy and angular distributions and the ion flux incident on the substrate.
Issue Date:2005
Description:137 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.
Other Identifier(s):(MiAaPQ)AAI3182409
Date Available in IDEALS:2015-09-25
Date Deposited:2005

This item appears in the following Collection(s)

Item Statistics