Files in this item

FilesDescriptionFormat

application/pdf

application/pdf3223714.pdf (3MB)Restricted to U of Illinois
(no description provided)PDF

Description

Title:Hafnium Nitride(x): Phase Composition, Microstructure, and Physical Properties of Epitaxial and Polycrystalline Layers
Author(s):Seo, Hwan-Seok
Doctoral Committee Chair(s):Greene, J.E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:The phase-compositions obtained in HfNx grown on SiO 2 at 350°C are alpha-Hf:N (x ≤ 0.6); multiphases (0.6 ≤ x ≤ 0.9); delta-HfN single-phase (0.9 ≤ x ≤ 1.3); and mixtures of delta-HfN and higher nitrides (x ≥ 1.3). HfNx layers with 0.9 ≤ x ≤ 1.2 grown under mild ion-irradiation are underdense with mixed orientation, low in-plane stress, and rough surfaces due to limited adatom mobilities resulting in kinetic roughening during film growth. However, the use of intense ion-irradiation leads to dense HfNx layers with 111 texture, compressive in-plane stress, and smooth surfaces due to enhanced adatom surface mobilities and thus, lower electrical resistivity and higher hardness are obtained. For HfNx layers with 1.2 ≤ x ≤ 1.6, the correspondingly higher steady state atomic N surface coverages during deposition alter growth kinetics in favor of 001 texture with a fully dense structure and compressive in-plane stress.
Issue Date:2006
Type:Text
Language:English
Description:138 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.
URI:http://hdl.handle.net/2142/82782
Other Identifier(s):(MiAaPQ)AAI3223714
Date Available in IDEALS:2015-09-25
Date Deposited:2006


This item appears in the following Collection(s)

Item Statistics