We are inviting IDEALS users, both people looking for materials in IDEALS and those who want to deposit their work, to give us feedback on improving this service through an interview. Participants will receive a $20 VISA gift card. Please sign up via webform.

Files in this item



application/pdf3223714.pdf (3MB)Restricted to U of Illinois
(no description provided)PDF


Title:Hafnium Nitride(x): Phase Composition, Microstructure, and Physical Properties of Epitaxial and Polycrystalline Layers
Author(s):Seo, Hwan-Seok
Doctoral Committee Chair(s):Greene, J.E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:The phase-compositions obtained in HfNx grown on SiO 2 at 350°C are alpha-Hf:N (x ≤ 0.6); multiphases (0.6 ≤ x ≤ 0.9); delta-HfN single-phase (0.9 ≤ x ≤ 1.3); and mixtures of delta-HfN and higher nitrides (x ≥ 1.3). HfNx layers with 0.9 ≤ x ≤ 1.2 grown under mild ion-irradiation are underdense with mixed orientation, low in-plane stress, and rough surfaces due to limited adatom mobilities resulting in kinetic roughening during film growth. However, the use of intense ion-irradiation leads to dense HfNx layers with 111 texture, compressive in-plane stress, and smooth surfaces due to enhanced adatom surface mobilities and thus, lower electrical resistivity and higher hardness are obtained. For HfNx layers with 1.2 ≤ x ≤ 1.6, the correspondingly higher steady state atomic N surface coverages during deposition alter growth kinetics in favor of 001 texture with a fully dense structure and compressive in-plane stress.
Issue Date:2006
Description:138 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.
Other Identifier(s):(MiAaPQ)AAI3223714
Date Available in IDEALS:2015-09-25
Date Deposited:2006

This item appears in the following Collection(s)

Item Statistics