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Description
Title: | Hafnium Nitride(x): Phase Composition, Microstructure, and Physical Properties of Epitaxial and Polycrystalline Layers |
Author(s): | Seo, Hwan-Seok |
Doctoral Committee Chair(s): | Greene, J.E. |
Department / Program: | Materials Science and Engineering |
Discipline: | Materials Science and Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Materials Science |
Abstract: | The phase-compositions obtained in HfNx grown on SiO 2 at 350°C are alpha-Hf:N (x ≤ 0.6); multiphases (0.6 ≤ x ≤ 0.9); delta-HfN single-phase (0.9 ≤ x ≤ 1.3); and mixtures of delta-HfN and higher nitrides (x ≥ 1.3). HfNx layers with 0.9 ≤ x ≤ 1.2 grown under mild ion-irradiation are underdense with mixed orientation, low in-plane stress, and rough surfaces due to limited adatom mobilities resulting in kinetic roughening during film growth. However, the use of intense ion-irradiation leads to dense HfNx layers with 111 texture, compressive in-plane stress, and smooth surfaces due to enhanced adatom surface mobilities and thus, lower electrical resistivity and higher hardness are obtained. For HfNx layers with 1.2 ≤ x ≤ 1.6, the correspondingly higher steady state atomic N surface coverages during deposition alter growth kinetics in favor of 001 texture with a fully dense structure and compressive in-plane stress. |
Issue Date: | 2006 |
Type: | Text |
Language: | English |
Description: | 138 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006. |
URI: | http://hdl.handle.net/2142/82782 |
Other Identifier(s): | (MiAaPQ)AAI3223714 |
Date Available in IDEALS: | 2015-09-25 |
Date Deposited: | 2006 |
This item appears in the following Collection(s)
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Dissertations and Theses - Materials Science and Engineering
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois