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|Title:||Hafnium Nitride(x): Phase Composition, Microstructure, and Physical Properties of Epitaxial and Polycrystalline Layers|
|Doctoral Committee Chair(s):||Greene, J.E.|
|Department / Program:||Materials Science and Engineering|
|Discipline:||Materials Science and Engineering|
|Degree Granting Institution:||University of Illinois at Urbana-Champaign|
|Subject(s):||Engineering, Materials Science|
|Abstract:||The phase-compositions obtained in HfNx grown on SiO 2 at 350°C are alpha-Hf:N (x ≤ 0.6); multiphases (0.6 ≤ x ≤ 0.9); delta-HfN single-phase (0.9 ≤ x ≤ 1.3); and mixtures of delta-HfN and higher nitrides (x ≥ 1.3). HfNx layers with 0.9 ≤ x ≤ 1.2 grown under mild ion-irradiation are underdense with mixed orientation, low in-plane stress, and rough surfaces due to limited adatom mobilities resulting in kinetic roughening during film growth. However, the use of intense ion-irradiation leads to dense HfNx layers with 111 texture, compressive in-plane stress, and smooth surfaces due to enhanced adatom surface mobilities and thus, lower electrical resistivity and higher hardness are obtained. For HfNx layers with 1.2 ≤ x ≤ 1.6, the correspondingly higher steady state atomic N surface coverages during deposition alter growth kinetics in favor of 001 texture with a fully dense structure and compressive in-plane stress.|
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.
|Date Available in IDEALS:||2015-09-25|
This item appears in the following Collection(s)
Dissertations and Theses - Materials Science and Engineering
Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois