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Title:Phosphorus Incorporation During Silicon(001):phosphorus Gas-Source Molecular Beam Epitaxy: Effects on Film Growth Kinetics, Surface Morphology, and the Self-Organization of Germanium Quantum Dot Overlays
Author(s):Cho, Benjamin
Doctoral Committee Chair(s):Greene, Joseph E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:I build upon these results to understand the effect of growth rate and P predeposition on Ge/Si(001) island geometry, density, and spatial distributions. Ge quantum dots are deposited on three types of starting surfaces: (1) Si(001) buffer layers which serve as a reference, (2) Si(001) layers with predeposited P coverages thetaP ranging from 0 to 1 ML, and (3) P-doped Si(001) with CP = 3.4x1018-8.3x10 18 cm-3, which corresponds to thetaP = 0.5-0.8 ML. Predeposited P passivates and roughens the Si(001) surface, which inhibits surface diffusion and causes an increase in Ge island density and pyramid-to-dome ratio, accompanied by enhanced island self-organization along directions.
Issue Date:2007
Description:106 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007.
Other Identifier(s):(MiAaPQ)AAI3269859
Date Available in IDEALS:2015-09-25
Date Deposited:2007

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