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Description
Title: | Low-Temperature Chemical Vapor Depostion of Ruthenium and Manganese Nitride Thin Films |
Author(s): | Lazarz, Teresa S. |
Doctoral Committee Chair(s): | Abelson, John R. |
Department / Program: | Materials Science and Engineering |
Discipline: | Materials Science and Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Physics, Condensed Matter |
Abstract: | Manganese nitride films were grown by chemical vapor deposition from the volatile manganese(II) amido precursor bis[di(tert)-butyl)amido]manganese(II)and ammonia. Between 80 and 200°C, the films grown from bis[di(tert )-butyl)amido]manganese(II)contain crystalline eta-Mn3N 2. At 300°C, a mixture of eta- and xi-phase manganese nitride with a manganese carbide impurity is deposited. Oxygen and carbon contamination in the bulk of the films is less than 1 atomic percent. Remarkably, the films are nearly completely crystalline at growth temperatures of 200°C and above. The growth rate of 5.9 nm/min at 200°C is also remarkably high for such a low growth temperature. The crystallinity and rapid growth rates are attributed to the labile metal-ligand bonding characteristic of high-spin MnII. As a result, reactive surface species remain mobile on the surface throughout much of the reaction pathway leading to nitride growth, and can settle into low-energy ordered arrangements before they become incorporated into the bulk by subsequent deposition activity. |
Issue Date: | 2009 |
Type: | Text |
Language: | English |
Description: | 78 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009. |
URI: | http://hdl.handle.net/2142/82859 |
Other Identifier(s): | (MiAaPQ)AAI3392113 |
Date Available in IDEALS: | 2015-09-25 |
Date Deposited: | 2009 |
This item appears in the following Collection(s)
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Dissertations and Theses - Materials Science and Engineering
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois