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Title:Low-Temperature Chemical Vapor Depostion of Ruthenium and Manganese Nitride Thin Films
Author(s):Lazarz, Teresa S.
Doctoral Committee Chair(s):Abelson, John R.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:Manganese nitride films were grown by chemical vapor deposition from the volatile manganese(II) amido precursor bis[di(tert)-butyl)amido]manganese(II)and ammonia. Between 80 and 200°C, the films grown from bis[di(tert )-butyl)amido]manganese(II)contain crystalline eta-Mn3N 2. At 300°C, a mixture of eta- and xi-phase manganese nitride with a manganese carbide impurity is deposited. Oxygen and carbon contamination in the bulk of the films is less than 1 atomic percent. Remarkably, the films are nearly completely crystalline at growth temperatures of 200°C and above. The growth rate of 5.9 nm/min at 200°C is also remarkably high for such a low growth temperature. The crystallinity and rapid growth rates are attributed to the labile metal-ligand bonding characteristic of high-spin MnII. As a result, reactive surface species remain mobile on the surface throughout much of the reaction pathway leading to nitride growth, and can settle into low-energy ordered arrangements before they become incorporated into the bulk by subsequent deposition activity.
Issue Date:2009
Description:78 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009.
Other Identifier(s):(MiAaPQ)AAI3392113
Date Available in IDEALS:2015-09-25
Date Deposited:2009

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