Files in this item



application/pdf9737110.pdf (5MB)Restricted to U of Illinois
(no description provided)PDF


Title:Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition
Author(s):Ganapathiraman, Ramanath
Doctoral Committee Chair(s):Allen, L.H.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\sb2$ interface. Large stresses generated due to TiF$\sb3$ formation, and destruction of the Ti glue layer due to TiF$\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\sb6$ with the Ti underlayer.
Issue Date:1997
Description:142 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
Other Identifier(s):(MiAaPQ)AAI9737110
Date Available in IDEALS:2015-09-25
Date Deposited:1997

This item appears in the following Collection(s)

Item Statistics