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Title:Interactions of WF(6) With TiN/Ti Barriers During W Chemical Vapor Deposition
Author(s):Ganapathiraman, Ramanath
Doctoral Committee Chair(s):Allen, L.H.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Abstract:F buildup in the Ti underlayer of TiN/Ti bilayers is suggested to be the major cause of delamination. High F concentration causes phase formation and alters the chemistry of the Ti/SiO$\sb2$ interface. Large stresses generated due to TiF$\sb3$ formation, and destruction of the Ti glue layer due to TiF$\sb4$ evolution jeopardize the adhesion of the TiN/Ti bilayer at the Ti/SiO$\sb2$ interface. The delamination problem can be alleviated by improving the TiN microstructure and/or by hastening the W nucleation process to minimize the interaction of WF$\sb6$ with the Ti underlayer.
Issue Date:1997
Type:Text
Language:English
Description:142 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/82873
Other Identifier(s):(MiAaPQ)AAI9737110
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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