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Title:In Situ Measurement and Modification of the Interface Potential in Hydrogenated Amorphous Silicon Solar Cells
Author(s):Nuruddin, Ahmad
Doctoral Committee Chair(s):Abelson, J.R.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:Atomic H treatment leads to ZnO reduction which enhances the potential barrier at ZnO/p$\sp{+}$ a-Si,C:H interface, and lowers the built-in potential in the p$\sp{+}$ layer. Ozone treated ZnO surface reduces the potential barrier, but depletes the surface conductivity. A treatment of atomic H and ozone on ZnO surface improves the ZnO/p$\sp{+}$ a-Si,C:H interface potential, without sacrificing the conductivity of ZnO. As a result, the interface potential barrier reduces from 0.45 to 0.03 Volt, and the built-in potential in the p$\sp{+}$ layer increases $\approx$20 mV. Insertion of $\sim$25 A unhydrogenated p$\sp{+}$ a-Si,C between ZnO/p$\sp{+}$ a-Si,C:H completely eliminates the interface potential barrier. (Abstract shortened by UMI.).
Issue Date:1997
Type:Text
Language:English
Description:90 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/82877
Other Identifier(s):(MiAaPQ)AAI9737208
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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