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Title:Substrate Dependence on the Growth and Texture of Lead Titanate and Lead Zirconate Titanate Thin Films by Metal Organic Chemical Vapor Deposition
Author(s):Yen, Bi-Ming
Doctoral Committee Chair(s):Chen, Haydn
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Abstract:Substrates employed for PT and PZT film growth in this study can be categorized as the single crystalline substrates, polycrystalline substrates, and the amorphous substrates. The PT films grown on the single crystal oxide substrates (MgO(100) and LaAlO$\sb3$(100)) are single crystalline and exhibit ferroelectric domain structures. The differential thermal stress and the transformation stress are important in determining the resulting domain structures. On the other hand, growth conditions and microstructures are different when PT and PZT films were deposited on polycrystalline or amorphous substrates (e.g. electrode-coated and bare Si with amorphous SiO$\sb2$ overlayer). The grown films are polycrystalline and are usually preferentially oriented. For films grown at a temperature higher than the PT transition temperature (i.e., grown in cubic phase), the film orientation is controlled by the anisotropic growth rates along different crystal directions, the epitaxial relationship and differential thermal stress between the film and substrate, as well as the transformation stress. On the other hand, textures of the films grown below the transition point are determined by the epitaxial relationship, the anisotropic growth rate, and the electrostatic effect. The purpose of this research is to develop a better understanding of formation mechanisms for PT and PZT thin films grown by MOCVD.
Issue Date:1997
Type:Text
Language:English
Description:193 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/82883
Other Identifier(s):(MiAaPQ)AAI9737297
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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