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 Title: Kinetic and Microstructural Study of Titanium Nitride Deposited by Laser Chemical Vapor Deposition Author(s): Egland, Keith Maynard Doctoral Committee Chair(s): Mazumder, Jyotirmoy Department / Program: Materials Science and Engineering Discipline: Materials Science and Engineering Degree Granting Institution: University of Illinois at Urbana-Champaign Degree: Ph.D. Genre: Dissertation Subject(s): Engineering, Materials Science Abstract: The deposition apparent activation energy was calculated as 122 $\pm$ 9 kJ/mole using growth rates measured by film height and 117 $\pm$ 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above N$\sb2$ and H$\sb2$ levels of 1.25% and below TiCl$\sb4$ input of 4.5%, the growth rate has a half-order dependence on nitrogen and a linear dependence on hydrogen and is approximated by$$\rm r = {{kP\sb{TiCl\sb4}P\sb{H\sb2}P\sbsp{N\sb2}{1/2}exp\left({{-}E\sb{a}\over {RT}\right)}\over{1 + P\sb{Ar}}}}.$$Since nitrogen positively affects growth rate (when added to a TiCl$\sb4$+H$\sb2$ mixture), stepwise reduction of TiCl$\sb4$ to Ti by hydrogen does not occur. $\rm NH\sb{x}$ complexes are clearly involved in the growth mechanism; a likely combination of rate determining steps is the formation of NH and the initial reduction of TiCl$\sb4$ by hydrogen. Issue Date: 1997 Type: Text Language: English Description: 138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997. URI: http://hdl.handle.net/2142/82885 Other Identifier(s): (MiAaPQ)AAI9812578 Date Available in IDEALS: 2015-09-25 Date Deposited: 1997
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