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Title:Kinetic and Microstructural Study of Titanium Nitride Deposited by Laser Chemical Vapor Deposition
Author(s):Egland, Keith Maynard
Doctoral Committee Chair(s):Mazumder, Jyotirmoy
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:The deposition apparent activation energy was calculated as 122 $\pm$ 9 kJ/mole using growth rates measured by film height and 117 $\pm$ 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above N$\sb2$ and H$\sb2$ levels of 1.25% and below TiCl$\sb4$ input of 4.5%, the growth rate has a half-order dependence on nitrogen and a linear dependence on hydrogen and is approximated by$$\rm r = {{kP\sb{TiCl\sb4}P\sb{H\sb2}P\sbsp{N\sb2}{1/2}exp\left({{-}E\sb{a}\over {RT}\right)}\over{1 + P\sb{Ar}}}}.$$Since nitrogen positively affects growth rate (when added to a TiCl$\sb4$+H$\sb2$ mixture), stepwise reduction of TiCl$\sb4$ to Ti by hydrogen does not occur. $\rm NH\sb{x}$ complexes are clearly involved in the growth mechanism; a likely combination of rate determining steps is the formation of NH and the initial reduction of TiCl$\sb4$ by hydrogen.
Issue Date:1997
Type:Text
Language:English
Description:138 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/82885
Other Identifier(s):(MiAaPQ)AAI9812578
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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