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Title:Effects of Intrinsic and Extrinsic Point Defects on Epitaxial Single Crystal Copper-Indium(1-X)-Gallium(x)-Diselenide
Author(s):Schroeder, David James
Doctoral Committee Chair(s):Rockett, Angus A.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Materials Science
Abstract:The steady state photoconductivity of samples which had been ion implanted with Se and Cr, as well as samples which were contaminated with Na by diffusion, was measured. These measurements were made to determine whether contamination by these elements or severe radiation damage affects minority carrier recombination kinetics. In all cases the photoconductivity was found to be unaffected other than by changes in mobility. (Abstract shortened by UMI.).
Issue Date:1997
Type:Text
Language:English
Description:94 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/82895
Other Identifier(s):(MiAaPQ)AAI9812762
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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