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Title:Structural and Optical Properties of Gan-Based Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
Author(s):Shim, Kyu-Hwan
Doctoral Committee Chair(s):Kim, Kyekyoon
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:$\rm Al\sb{0.2}Ga\sb{0.8}$N-GaN MQWs grown by PAMBE demonstrate their feasibility for optical device application. The excitonic transition properties observed from the MQW structures suggest the implementation of very thin, $<$50 A, quantum wells for high efficiency and emission uniformity.
Issue Date:1997
Type:Text
Language:English
Description:116 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.
URI:http://hdl.handle.net/2142/82897
Other Identifier(s):(MiAaPQ)AAI9812770
Date Available in IDEALS:2015-09-25
Date Deposited:1997


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