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 Title: Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE Author(s): Myoung, Jae-Min Doctoral Committee Chair(s): Kim, Kyekyoon Department / Program: Materials Science and Engineering Discipline: Materials Science and Engineering Degree Granting Institution: University of Illinois at Urbana-Champaign Degree: Ph.D. Genre: Dissertation Subject(s): Physics, Condensed Matter Abstract: Mg-doped GaN films grown at different temperatures are investigated. It is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high Mg flux, heavily doped p-type GaN films are obtained. The observation of a very smooth surface for the Mg-doped films grown at T$\sb{\rm s} \ge$ 650$\sp\circ$C suggests a layer-by-layer growth mode with good crystallinity. This fact is due to a large decrease in the activation energy of the diffusion coefficient in the presence of metallic Mg, which promotes the diffusion of Ga adatoms and enhances the step-flow for a layer-by-layer growth. Issue Date: 1998 Type: Text Language: English Description: 137 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. URI: http://hdl.handle.net/2142/82902 Other Identifier(s): (MiAaPQ)AAI9834718 Date Available in IDEALS: 2015-09-25 Date Deposited: 1998
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