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Title:Growth Kinetics of GaN and Effects of Flux Ratio and Growth Temperature on Properties of Undoped and Mg-Doped GaN Films Grown by PAMBE
Author(s):Myoung, Jae-Min
Doctoral Committee Chair(s):Kim, Kyekyoon
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Physics, Condensed Matter
Abstract:Mg-doped GaN films grown at different temperatures are investigated. It is found that the growth conditions to achieve p-type films are closely related to those for undoped films since p-type conductivity is obtained only after a complete compensation of the background carriers. By supplying a high Mg flux, heavily doped p-type GaN films are obtained. The observation of a very smooth surface for the Mg-doped films grown at T$\sb{\rm s} \ge$ 650$\sp\circ$C suggests a layer-by-layer growth mode with good crystallinity. This fact is due to a large decrease in the activation energy of the diffusion coefficient in the presence of metallic Mg, which promotes the diffusion of Ga adatoms and enhances the step-flow for a layer-by-layer growth.
Issue Date:1998
Description:137 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
Other Identifier(s):(MiAaPQ)AAI9834718
Date Available in IDEALS:2015-09-25
Date Deposited:1998

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