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Title:Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization
Author(s):Kim, Wook
Doctoral Committee Chair(s):Morkoc, Hadis
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Subject(s):Engineering, Materials Science
Abstract:For the growth of n-type films, a specific ammonia flow rate (or V/III ratio if Ga flux is fixed) was required to obtain films with high electron Hall mobility. X-ray diffraction (XRD), photoluminescence (PL), cross-sectional transmission microscopy (XTEM) and deep level transient spectroscopy (DLTS) results also show consistency with electrical results. For the growth of Mg-doped GaN films, larger ammonia flow rates produced electrically better films. This phenomenon has been accounted for by using a simple Ga vacancy model. Also by carrying out secondary ion mass spectroscopy (SIMS) study for the Mg-doped films, the behavior of Mg and H affected by the ammonia flow rate during the film growth was experimentally investigated for the first time.
Issue Date:1998
Description:171 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
Other Identifier(s):(MiAaPQ)AAI9904508
Date Available in IDEALS:2015-09-25
Date Deposited:1998

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