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Title:H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy
Author(s):Kim, Hyungjun
Doctoral Committee Chair(s):Greene, J.E.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Physics, Condensed Matter
Abstract:Based on all the above results, the growth kinetics of B doped Si 1-xGex(001) GS-MBE were modeled. Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower than the value for Si(001):B, -0.53 eV.
Issue Date:1998
Type:Text
Language:English
Description:158 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
URI:http://hdl.handle.net/2142/82912
Other Identifier(s):(MiAaPQ)AAI9912289
Date Available in IDEALS:2015-09-25
Date Deposited:1998


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