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Description
Title: | Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport |
Author(s): | Glass, Glenn Aaron |
Doctoral Committee Chair(s): | Greene, Joseph E. |
Department / Program: | Materials Science and Engineering |
Discipline: | Materials Science and Engineering |
Degree Granting Institution: | University of Illinois at Urbana-Champaign |
Degree: | Ph.D. |
Genre: | Dissertation |
Subject(s): | Engineering, Electronics and Electrical |
Abstract: | CB in Si1-xGex(001) increases with precursor flux ratio and B is incorporated into active sites at concentrations to C*B (Ts) = 2.5 x 1020 and 4.6 x 1020 cm-3 for x = 0 and 0.18 at Ts = 600 and 500°C, respectively. At higher B concentrations, there is a large decrease in the activated fraction of incorporated B. The total acceptor concentration continues to increase. No B precipitates or misfit dislocations were detected by HR-XRD or TEM. The out-of-plane lattice constant a⊥ decreases linearly with increasing C*B and non-linearly, for CB > C*B . Electrical properties are in good agreement with theoretical values to C*B . When thetaB > thetaB,sat, B accumulates in the upper layer, and a parallel incorporation channel becomes available in which B is incorporated as B-pairs which are electrically inactive. |
Issue Date: | 1999 |
Type: | Text |
Language: | English |
Description: | 165 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999. |
URI: | http://hdl.handle.net/2142/82923 |
Other Identifier(s): | (MiAaPQ)AAI9953025 |
Date Available in IDEALS: | 2015-09-25 |
Date Deposited: | 1999 |
This item appears in the following Collection(s)
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Dissertations and Theses - Materials Science and Engineering
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Graduate Dissertations and Theses at Illinois
Graduate Theses and Dissertations at Illinois