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Title:Microstructure Evolution in Ion -Implanted Aluminum Gallium Arsenide
Author(s):Lagow, Benjamin Wilson
Doctoral Committee Chair(s):Robertson, Ian M.
Department / Program:Materials Science and Engineering
Discipline:Materials Science and Engineering
Degree Granting Institution:University of Illinois at Urbana-Champaign
Degree:Ph.D.
Genre:Dissertation
Subject(s):Engineering, Electronics and Electrical
Abstract:The fact that the microstructure changes gradually rather than abruptly as aluminum content is increased suggests that there is a single underlying mechanism responsible for the varied microstructures observed in implanted AlxGa1-xAs. An amorphization model based on the physical and thermal properties of AlxGa1-xAs is presented. The variation of the microstructure with Al content is demonstrated to be a function of the distribution of energetic recoils in the material during implantation.
Issue Date:1999
Type:Text
Language:English
Description:145 p.
Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999.
URI:http://hdl.handle.net/2142/82925
Other Identifier(s):(MiAaPQ)AAI9953069
Date Available in IDEALS:2015-09-25
Date Deposited:1999


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